Schottkydiodeja

Schottky diodes are diodes formed by a metal–semiconductor junction, rather than a traditional p–n junction. They typically consist of a metal electrode in intimate contact with a heavily doped n-type semiconductor, usually silicon, creating a Schottky barrier that enables rectifying behavior with distinctive electrical characteristics.

Key features include a low forward voltage drop, typically about 0.15–0.45 V at moderate current, and very fast switching speeds. Operation relies on majority carriers, so reverse recovery is minimal. The trade-offs are higher reverse leakage currents, especially at elevated temperatures, and lower reverse-voltage ratings than many PN diodes.

Applications include low-voltage, high-speed rectification in switch-mode power supplies and DC-DC converters, as well as RF detectors and mixers and circuit protection diodes. They are favored where fast switching and low forward drop improve efficiency and reduce heat.

Materials and variants: Silicon Schottky diodes are common, with metal contacts such as nickel, platinum, or tungsten on heavily doped n-type silicon. In power electronics, ratings span from tens to hundreds of volts and from milliamps to tens of amps. Some variants, sometimes called super barrier diodes, aim to optimize leakage or breakdown characteristics. Many Schottky diodes are available as surface-mounted components and are also integrated into integrated circuits.

History: The Schottky barrier concept and its diode implementation were described by Walter H. Schottky in the 1930s, with extensive development in the ensuing decades as silicon technology advanced.