LågtrycksCVD

LågtrycksCVD, or Low-Pressure Chemical Vapor Deposition, is a vacuum deposition method used to produce high-quality, thin films. This technique involves placing a substrate material within a vacuum chamber and introducing precursor gases. These gases react on the heated substrate surface, depositing a thin layer of solid material. The low pressure environment is crucial for achieving uniform film growth and minimizing gas-phase reactions that could lead to particulate contamination.

The process typically operates at pressures significantly below atmospheric pressure, ranging from a few millitorr to several torr. This reduced pressure increases the mean free path of gas molecules, allowing them to travel further before colliding with each other. Consequently, the precursor molecules are more likely to reach the substrate surface and react there, leading to conformal and dense film deposition.

LågtrycksCVD is widely employed in the semiconductor industry for depositing various materials such as silicon nitride, silicon dioxide, polysilicon, and various metals. Its advantages include excellent film uniformity, high purity, good step coverage, and the ability to deposit materials at relatively low temperatures compared to atmospheric pressure CVD. These characteristics make it suitable for fabricating microelectronic devices, optical coatings, and protective layers. The precise control over process parameters like temperature, pressure, and gas flow allows for tailoring the film properties to specific applications.