Käänteisjännite

Käänteisjännite refers to the voltage applied across a semiconductor device in a direction that opposes the normal flow of current. In a diode, for example, this is the condition where the positive terminal of the voltage source is connected to the cathode and the negative terminal to the anode. Under reverse bias, the depletion region at the p-n junction widens, significantly increasing the resistance and allowing only a very small leakage current to flow. If the reverse voltage exceeds a certain limit, known as the breakdown voltage, a large current can flow, potentially damaging the device. This breakdown can occur through mechanisms like Zener breakdown or avalanche breakdown, depending on the semiconductor material and doping levels. Understanding käänteisjännite is crucial for designing and operating electronic circuits, as it dictates the behavior and limitations of semiconductor components. It is a fundamental concept in solid-state physics and electronics.