Indiumgalliumseleniidiä

Indiumgalliumseleniidiä refers to a class of ternary inorganic compounds consisting of indium, gallium, and selenium. They form solid solutions with varying indium-to-gallium ratios, and are related to the binary selenides GaSe and In2Se3. Layered crystal structures enable anisotropic properties and, in many compositions, facile exfoliation into two-dimensional sheets.

The band gap can be tuned by adjusting composition, typically spanning from the near-infrared to visible depending on stoichiometry and crystal phase. This tunability makes indiumgalliumseleniidiä a subject of interest for optoelectronic applications and fundamental studies of layered chalcogenides.

Common synthesis routes include chemical vapor transport, Bridgman growth, and molecular beam epitaxy on insulating substrates; selenium-rich fluxes help prevent selenium vacancies during crystal growth. The resulting materials typically exhibit semiconducting behavior with layered structures that facilitate integration into heterostructures and devices.

Potential uses in optoelectronics include photodetectors, photovoltaics, and nonlinear optical devices. There is ongoing interest in two-dimensional forms and van der Waals heterostructures derived from indiumgalliumseleniidiä, as well as exploration of ferroelectric or piezoelectric properties in certain compositions. Research also focuses on understanding defect physics, carrier dynamics, and the influence of composition on optical responses.

Safety and handling follow standard practices for inorganic and chalcogenide materials. Selenium compounds can be toxic, and handling should include appropriate engineering controls, personal protective equipment, and proper disposal in accordance with safety regulations.