In2O3Sn

In2O3Sn, also known as indium tin oxide (ITO), is a transparent conducting oxide composed of indium, oxygen, and tin. It is widely used in various applications due to its unique combination of electrical conductivity and optical transparency. The material is typically deposited as a thin film onto substrates such as glass, plastic, or silicon, making it suitable for applications in optoelectronics, touchscreens, and solar cells.

The electrical conductivity of ITO arises from the presence of free electrons in the material, which are contributed by the tin dopant. The optical transparency is due to the wide bandgap of the material, which allows it to transmit visible light while still conducting electricity. The transparency and conductivity of ITO can be further enhanced by annealing the material, which reduces the number of defects and increases the carrier mobility.

ITO is often deposited using physical vapor deposition (PVD) techniques such as sputtering or evaporation, or chemical vapor deposition (CVD) techniques such as atomic layer deposition (ALD). The choice of deposition technique depends on the desired film properties and the specific application.

Despite its many advantages, ITO has some limitations. The material is relatively expensive due to the high cost of indium, and its supply is limited. Additionally, ITO is not stable in reducing environments, which can limit its use in certain applications. To address these limitations, researchers are exploring alternative transparent conducting oxides such as zinc tin oxide (ZTO) and aluminum-doped zinc oxide (AZO).