In1xGaxAs
In1−xGaxAs, commonly written as In1−xGaxAs or InGaAs, is a family of III–V semiconductor alloys formed from indium arsenide (InAs) and gallium arsenide (GaAs). The composition is controlled by the parameter x, which ranges from 0 to 1, so the material spans from GaAs (x = 0) to InAs (x = 1). The alloy inherits properties from both binaries and exhibits a continuously tunable bandgap and lattice constant.
The electronic structure of In1−xGaxAs is characterized by a direct bandgap for most compositions used in devices.
Growth and fabrication of In1−xGaxAs are typically accomplished by molecular beam epitaxy (MBE) or metal-organic chemical
Applications of In1−xGaxAs span infrared photodetectors, laser diodes, modulators, and integrated optoelectronic devices in telecommunications and