GeSbTebased
GeSbTe based materials, often abbreviated as GST, represent a class of phase-change materials with unique properties that make them highly suitable for non-volatile memory applications. These compounds are typically alloys of germanium (Ge), antimony (Sb), and tellurium (Te), with specific stoichiometric ratios that dictate their performance. The key characteristic of GST materials is their ability to reversibly switch between two distinct structural and electrical states: an amorphous state and a crystalline state.
The amorphous state of GST is characterized by a disordered atomic arrangement and a high electrical resistance.
This reversible amorphous-to-crystalline phase change is the foundation of phase-change random-access memory (PCRAM) or PRAM. The