GeH2

GeH2, also known as germane hydride, is a chemical compound consisting of one germanium atom and two hydrogen atoms. It is a colorless, highly reactive gas at room temperature. GeH2 is a member of the group 14 hydrides, which include the lighter analogs SiH2 and SnH2. The compound is notable for its role in the synthesis of other germanium compounds and its use in semiconductor technology.

The molecular structure of GeH2 is bent, with a bond angle of approximately 92 degrees. This structure is similar to that of water (H2O) and other group 14 hydrides. The Ge-H bond length is about 1.52 Å, which is slightly longer than the Si-H bond in SiH2 due to the larger atomic radius of germanium.

GeH2 is typically prepared by the reaction of germanium with hydrogen at high temperatures. It can also be synthesized by the reduction of germanium halides with hydrogen. The compound is highly reactive and readily undergoes hydrolysis, forming germanium dioxide (GeO2) and water.

In semiconductor technology, GeH2 is used as a precursor in the chemical vapor deposition (CVD) process for the deposition of germanium thin films. These films are used in the fabrication of transistors and other electronic devices. The use of GeH2 in CVD allows for the precise control of film thickness and composition, making it a valuable tool in the semiconductor industry.

GeH2 is also of interest in fundamental chemistry due to its unique electronic structure and reactivity. Its study provides insights into the bonding and reactivity of heavier group 14 elements. However, due to its high reactivity and toxicity, handling GeH2 requires special precautions to ensure safety.