GaAsPllä
GaAsPllä is a term used in some contexts to denote gallium arsenide phosphide alloys, GaAs1−xPx, a ternary semiconductor alloy in which phosphorus partially substitutes arsenic in the GaAs lattice. The name is not widely standardized; in most English-language literature the material is referred to as GaAsP or GaAs1−xPx.
Crystal structure and properties: GaAsPllä shares the zinc blende structure typical of GaAs and GaP. As the
Fabrication and growth: The alloy is typically grown by epitaxial methods such as metal-organic vapor-phase epitaxy
Applications: GaAsPllä enables bandgap engineering for optoelectronic devices, including light-emitting diodes, laser diodes, photodetectors, and tandem
Safety and handling: As-containing materials require appropriate safety measures and handling protocols in fabrication environments.