GaAs1xPx
GaAs1-xPx, also written GaAs1−xPx, is a ternary III–V semiconductor alloy formed by substituting phosphorus for arsenic in gallium arsenide. The composition parameter x ranges from 0 to 1, yielding GaAs (x=0) to GaP (x=1). The alloy crystallizes in the zinc blende structure and inherits many properties from the parent compounds.
The introduction of phosphorus to GaAs widens the electronic bandgap; as x increases, the bandgap energy increases
GaAs1-xPx is typically grown by epitaxial methods such as metal-organic chemical vapor deposition (MOCVD, also called
Applications include optoelectronic devices such as light-emitting diodes and laser diodes spanning the visible to near-infrared,