FinFETteknologien
FinFET technology is a type of transistor used in modern integrated circuits, particularly in advanced semiconductor manufacturing processes. The name "FinFET" is derived from the fin-like structure that forms the gate of the transistor. This structure allows for better control of the current flow, leading to improved performance and reduced power consumption compared to previous transistor technologies.
The FinFET structure consists of a thin silicon fin that acts as the channel, with the gate
FinFET technology was first introduced by Intel in 2012 with the 22-nanometer process node. Since then, it
FinFET technology has several advantages, including improved performance, lower power consumption, and better scalability. However, it