DOFet

DOFet, also known as a double-gate field-effect transistor, is a type of transistor that offers enhanced control over the channel current. Unlike a single-gate FET, a DOFet features two gates that independently or jointly control the flow of charge carriers. This dual-gate structure allows for more complex switching and modulation characteristics.

The primary advantage of a DOFet lies in its ability to suppress short-channel effects, which become prominent in highly scaled transistors. By applying a voltage to the second gate, it can influence the potential barrier in the channel, effectively extending the gate control length. This leads to improved subthreshold swing, reduced leakage current, and better immunity to drain-induced barrier lowering (DIBL).

DOFets can be configured in various ways. In some designs, the gates are connected in series, with the input signal applied to one gate and the other used for modulation or biasing. In other configurations, the gates are connected in parallel, allowing for independent control or a combined effect on the channel. This flexibility makes DOFet suitable for a range of applications, including high-performance digital circuits, analog amplifiers, and memory cells.

The fabrication of DOFet is similar to that of conventional MOSFETs but involves additional steps for creating the second gate structure. Despite the increased complexity, the performance benefits offered by DOFet have made it an area of active research and development in the pursuit of more efficient and powerful semiconductor devices.