magnetoresisztív

Magnetoresisztív is a Hungarian term that translates to magnetoresistive in English. It refers to the property of certain materials to change their electrical resistance when subjected to an external magnetic field. This phenomenon is the basis for various sensor technologies.

There are several types of magnetoresistance. Anisotropic magnetoresistance (AMR) is observed in ferromagnetic materials where the resistance depends on the angle between the current and the magnetization direction. Giant magnetoresistance (GMR) is a quantum mechanical effect seen in multilayers of ferromagnetic and non-magnetic materials. A small change in an external magnetic field can cause a significant change in resistance due to the spin-dependent scattering of electrons. Tunnel magnetoresistance (TMR) occurs in magnetic tunnel junctions, where electrons tunnel through a thin insulating layer between two ferromagnetic layers. The resistance is dependent on the relative orientation of the magnetization of the ferromagnetic layers.

Magnetoresistive effects have found widespread applications. Hard disk drives, for instance, utilize GMR or TMR sensors to read data stored magnetically. Magnetoresistive sensors are also used in automotive applications for position sensing, in consumer electronics for compasses and position detection, and in industrial settings for measuring magnetic fields and detecting proximity. The sensitivity and miniaturization capabilities of magnetoresistive devices make them highly valuable in modern technology.