magnetoresistivisiä

Magnetoresistivisiä refers to the phenomenon of magnetoresistance, which is the property of a material to change its electrical resistance in the presence of an external magnetic field. This change in resistance can be either an increase or a decrease. The magnitude of the magnetoresistance effect varies significantly among different materials and depends on factors such as the material's composition, crystal structure, and temperature.

There are several types of magnetoresistance. Giant magnetoresistance (GMR) is a particularly strong effect observed in thin-film structures composed of alternating ferromagnetic and non-magnetic layers. Another significant effect is tunnel magnetoresistance (TMR), found in magnetic tunnel junctions where a thin insulating barrier separates two ferromagnetic layers. Anisotropic magnetoresistance (AMR) is a property of ferromagnetic materials where resistance depends on the angle between the magnetization and the direction of current flow.

Magnetoresistive materials and phenomena have found widespread applications. They are crucial components in read heads for hard disk drives, enabling the detection of tiny magnetic signals. Magnetoresistive sensors are also used in various other devices, including automotive sensors for speed and position detection, magnetic field sensors for scientific instruments, and non-volatile magnetic random-access memory (MRAM). The ongoing research aims to discover and engineer materials with even larger magnetoresistance effects for future technological advancements.