lämpöoksidaation

Lämpöoksidaatio, known in English as thermal oxidation, is a chemical process that involves the reaction of a substance with oxygen at elevated temperatures. This process leads to the oxidation of the material, often resulting in the formation of oxides. The rate of thermal oxidation is highly dependent on the temperature, the partial pressure of oxygen, and the specific material being oxidized.

In materials science, thermal oxidation is a critical process for modifying the surface properties of various materials. For example, it is widely used in the semiconductor industry to create silicon dioxide (SiO2) layers on silicon wafers. This oxide layer serves as an excellent electrical insulator and is crucial for the fabrication of integrated circuits. The process typically involves exposing silicon to oxygen or steam at high temperatures, usually between 800 and 1200 degrees Celsius.

Beyond semiconductors, thermal oxidation plays a role in other fields. For instance, it is a common method for the degradation of volatile organic compounds (VOCs) in industrial exhaust streams. In these applications, VOCs are passed through a chamber heated to high temperatures, where they react with oxygen and are converted into less harmful substances like carbon dioxide and water. The efficiency of thermal oxidation for pollution control depends on factors such as residence time, temperature, and the concentration of the pollutants.