kollektoriemittorijännitetta

Kollektor-emitter-jännite, often abbreviated as Vce, is a fundamental parameter in the operation of bipolar junction transistors (BJTs). It represents the voltage difference measured between the collector terminal and the emitter terminal of the transistor. This voltage is crucial because it directly influences the current flow through the transistor, particularly the collector current.

In a BJT, the collector current is controlled by the base current. However, the maximum collector current that can flow is also limited by the applied collector-emitter voltage. When a transistor is operating in its active region, the collector-emitter voltage, along with the base-emitter voltage (Vbe), determines the transistor's operating point and its amplification characteristics.

A key concept related to Vce is the saturation voltage. When a transistor is saturated, it acts almost like a closed switch, and the Vce is very small, typically in the range of a few hundred millivolts. Conversely, in the cutoff region, when no base current is applied, the transistor acts like an open switch, and Vce can be close to the supply voltage. Understanding and controlling the collector-emitter voltage is essential for designing and analyzing electronic circuits that utilize BJTs, such as amplifiers and switches.