halbleiterstreifen

HalbleiterStreifen, also known in English as semiconductor strips, are thin, elongated sections of semiconductor material such as silicon or gallium arsenide. They are fabricated through processes that include wafer slicing, photolithography, doping, and dopant diffusion to create p‑n junctions along the strip length. The resulting devices function as photodiodes, photon counters, or thin‑film sensors, converting incident light into electrical signals.

Historically, the first commercial application of halbleiterstreifen appeared in the late 1950s with the development of linear photoelectric arrays for image scanning. Since then, the technology has evolved to include more complex junction architectures, such as trench photodiodes and quantum well structures, which enhance quantum efficiency and reduce dark current. Modern manufacturing employs deep reactive ion etching (DRIE) and metal‑oxide‑semiconductor (MOS) processing to integrate the strip devices directly onto read‑out electronics.

In practical use, halbleiterstreifen are widely employed in industrial machine vision, where they provide high‑resolution, wide‑dynamic‑range line scanning for product inspection. They are also integral to medical imaging sensors, especially in linear X‑ray detectors where spatial resolution and low noise are critical. Additional applications include environmental monitoring, where long‑term stability and resistance to harsh conditions are required, and in precision photometry for research laboratories.

The main advantages of halbleiterstreifen are their compactness and versatility. They enable dense packing of sensing elements and can be designed to work with various wavelengths, from visible to infrared. However, challenges such as heat dissipation, radiation hardness, and yield in mass production remain areas of active research. Overall, halbleiterstreifen continue to play a crucial role in advancing sensor technology across many industrial and scientific domains.