galliumnitridillä

Gallium nitride (GaN) is a binary compound semiconductor composed of gallium and nitrogen. It belongs to the family of III-V semiconductors, where gallium (a group 13 element) pairs with nitrogen (a group 15 element). GaN is renowned for its wide bandgap of approximately 3.4 electron volts (eV), making it highly suitable for applications requiring high efficiency, high power, and high-temperature performance.

GaN was first synthesized in 1932, but its potential as a semiconductor material was not fully recognized until the 1970s and 1980s. The development of high-quality GaN crystals and epitaxial growth techniques, such as metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE), has been crucial in advancing its use in electronic and optoelectronic devices. GaN is typically grown on substrates like sapphire (alumina) or silicon carbide due to its lack of native bulk crystal form.

One of the most significant applications of GaN is in light-emitting diodes (LEDs), where its wide bandgap allows for the emission of ultraviolet (UV) and blue light. Blue GaN LEDs, in particular, have revolutionized the display and lighting industries by enabling energy-efficient white light production through phosphorescence. GaN is also widely used in high-electron-mobility transistors (HEMTs) and power electronics, where its high electron saturation velocity and thermal conductivity improve performance in high-frequency and high-power devices.

Beyond electronics, GaN is explored for applications in sensors, solar cells, and even space-based systems due to its durability and resistance to radiation. Research continues to expand its use in next-generation technologies, including 5G communications, electric vehicles, and renewable energy systems. The material’s versatility, combined with ongoing advancements in fabrication, ensures its continued importance in semiconductor innovation.