galliiumarseniid
Gallium arsenide (GaAs) is a compound semiconductor composed of gallium and arsenic. It is a key material in the field of semiconductor electronics, particularly for high-performance and high-frequency devices. Gallium arsenide crystallizes in the zincblende structure, similar to that of diamond or gallium phosphide, and is a direct bandgap semiconductor, meaning its bandgap can be directly excited by photons, making it highly efficient for light-emitting applications.
The material was first synthesized in 1950 by researchers at the Bell Telephone Laboratories, though its semiconductor
Gallium arsenide is also widely used in optoelectronic devices such as light-emitting diodes (LEDs) and laser
Despite its benefits, gallium arsenide has some drawbacks, including higher production costs compared to silicon and
Gallium arsenide-based devices continue to play a critical role in advanced electronics and photonics, driving innovations