copperindiumtelluride

Copper indium telluride (CuInTe2) is a semiconductor in the copper‑chalcopyrite family of I-III-VI2 compounds. It crystallizes in the tetragonal chalcopyrite structure, similar to CuInSe2, and typically exhibits p-type conductivity due to intrinsic defects such as copper vacancies. Its electronic properties can be influenced by stoichiometry and processing conditions.

CuInTe2 has a direct bandgap near 1 eV at room temperature and a high optical absorption coefficient, allowing strong absorption of near-infrared light. This makes it a candidate for thin-film photovoltaic absorbers and infrared detectors. The bandgap can shift with temperature and composition, and related materials can be formed by alloying with sulfur or selenium to adjust optical properties.

Synthesis and growth methods include high-temperature solid-state reaction from copper, indium, and tellurium, as well as thin-film deposition techniques such as vacuum evaporation, sputtering, chemical vapor deposition, and molecular beam epitaxy. Bulk crystals can be grown by Bridgman or related methods, followed by annealing to improve crystallinity and reduce secondary phases.

Applications and research focus on CuInTe2 primarily revolve around solar energy conversion within the I-III-VI2 family. Although not as commercially widespread as CuInSe2 or Cu(In,Ga)Se2, CuInTe2 and its alloys offer potential as absorber layers in thin-film photovoltaic devices and may have uses in infrared sensing. Challenges include controlling native defects, achieving high-quality p–n junctions, and maintaining phase stability during processing. CuInTe2 is part of a broader family that includes CuInSe2 and CuInS2, withrelated telluride combinations explored for tuned bandgaps and device performance.