CuInTe2

CuInTe2, also called copper indium telluride, is a ternary semiconductor that has been studied as an absorber material for thin-film photovoltaics. It shares structural similarities with related copper indium chalcogenides and crystallizes in the tetragonal chalcopyrite structure (space group I-42d), a common framework for II–IV–VI2 compounds.

CuInTe2 has a direct bandgap close to 1.0–1.05 eV and exhibits strong optical absorption. The material is typically p-type, with copper vacancies and related defects acting as acceptors. Defect chemistry and growth conditions strongly influence carrier concentration and recombination losses in devices.

Common preparation routes include solid-state synthesis from elemental copper, indium, and tellurium followed by annealing, as well as thin-film deposition methods such as co-evaporation or vapor deposition combined with annealing or tellurization. Controlling phase purity and avoiding secondary phases are important challenges.

In device contexts, CuInTe2 is investigated as an absorber layer either in its pure form or in alloyed variants with selenium or sulfur to tune the bandgap. Research focuses on improving efficiency, stability, and compatibility with back-end contacts, while addressing telluride volatility and material defects.