atomikerrospinnoituksen

Atomikerrospinnoitus, a Finnish term, translates to atomic layer deposition (ALD) in English. It is a thin-film deposition technique that allows for the controlled growth of materials on a substrate, one atomic layer at a time. This process relies on sequential, self-limiting chemical reactions. During ALD, precursors are introduced to the substrate surface in separate, timed pulses. Each pulse reacts with the surface and saturates it, leaving a single atomic layer of the desired material. Between precursor pulses, an inert gas purge is used to remove any unreacted precursor or byproducts. This cyclical process is repeated until the desired film thickness is achieved. The self-limiting nature of the reactions ensures that the film grows conformally, meaning it coats complex 3D structures uniformly, and with excellent thickness control and uniformity over large areas. ALD is a versatile technique employed in various fields, including semiconductor manufacturing for gate dielectrics and diffusion barriers, optics for anti-reflective coatings, and catalysis for creating high surface area materials. Its ability to deposit a wide range of materials, including oxides, nitrides, and metals, with atomic precision makes it a valuable tool for advanced material science and nanotechnology.