Trägerladungsdichte

Trägerladungsdichte refers to the concentration of charge carriers within a material, specifically in the context of electrical conductivity. Charge carriers are the mobile particles that transport electric charge, and their density directly influences how well a material conducts electricity. In semiconductors, the primary charge carriers are electrons and holes.

In n-type semiconductors, the majority charge carriers are electrons, and their concentration is known as the electron concentration, often denoted by n. In p-type semiconductors, the majority charge carriers are holes, and their concentration is referred to as the hole concentration, often denoted by p. The product of electron and hole concentrations in an intrinsic (pure) semiconductor is a constant at a given temperature, known as the intrinsic carrier concentration squared.

The trägerladungsdichte is a crucial parameter for understanding and predicting the electrical behavior of materials. It impacts properties such as conductivity, resistivity, and the operation of semiconductor devices like diodes and transistors. For example, higher carrier densities generally lead to higher conductivity. Doping, the intentional introduction of impurities into a semiconductor, is a common method used to control and significantly alter the trägerladungsdichte, thereby tailoring the material's electrical characteristics for specific applications. The measurement of trägerladungsdichte can be performed using various techniques, including Hall effect measurements.