Silikonidiodin

Silikonidiodin is a semiconductor device made from silicon that forms a PN junction between p-type and n-type regions. It conducts current mainly in one direction and serves as a general-purpose rectifier and switching element in electronic circuits.

When forward-biased, carriers are injected across the junction, lowering the barrier and allowing current to flow. In reverse bias, the depletion region widens and only a small leakage current remains until breakdown.

Typical forward voltage drop is about 0.6 to 0.7 volts at moderate currents. Reverse leakage increases with temperature. Diodes are characterized by speed of switching and, for some types, the reverse breakdown voltage, which varies by design.

Common varieties include standard rectifier diodes, fast and ultra-fast switching diodes, and Schottky diodes, which have a lower forward voltage drop. Zener and TVS diodes are designed for voltage regulation and transient protection.

Applications cover power supply rectification, signal detection in radios and mixers, clamping and protection circuits, and switching converters. Schottky diodes are favored for high-speed or low-loss needs, while Zeners provide voltage references.

Manufacture starts with silicon crystal growth, dopant introduction to create p-type and n-type regions, and diffusion or implantation to form the PN junction. The devices are packaged in various forms, including axial and surface-mount packages.

Silicon diodes began to replace germanium devices in the 1950s and 1960s because of higher reverse breakdown voltage and better thermal stability. They remain among the most widely used semiconductor components in electronics.