Nionisatie

Nionisatie is a term that refers to the process of ion implantation, a technique used in semiconductor fabrication and materials science. Ion implantation involves accelerating ions of a specific element to high energies and then directing them into a target material. This process introduces dopants or other elements into the surface layers of the material, altering its electrical, chemical, or physical properties. The depth and concentration of the implanted ions can be precisely controlled by adjusting the acceleration voltage and the ion beam current. Nionisatie is crucial for creating p-n junctions in transistors, modifying the conductivity of silicon wafers, and enhancing the wear resistance or corrosion resistance of various materials. The energy of the ions determines how deep they penetrate the material, while the total dose (number of ions per unit area) dictates the concentration of the implanted species. Following implantation, a high-temperature annealing step is often performed to repair lattice damage caused by the energetic ions and to electrically activate the implanted dopants. This controlled introduction of foreign atoms at the atomic level makes nionisatie a cornerstone technology in modern electronics and advanced materials engineering.