Heterostrukturách

Heterostrukturách refers to interfaces between two different semiconductor materials. These materials have distinct electronic properties, such as different band gaps or doping types. When brought together, they form a heterojunction, which exhibits unique electrical and optical characteristics not found in either material individually.

The properties of a heterostructure are determined by the choice of semiconductor materials and the method of their fabrication. Common materials used include gallium arsenide (GaAs), aluminum gallium arsenide (AlGaAs), indium gallium phosphide (InGaP), and silicon (Si) along with silicon germanium (SiGe). Fabrication typically involves techniques like molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD) to ensure precise control over the interface.

Heterostructures are crucial components in many modern electronic and optoelectronic devices. They are fundamental to the operation of high-speed transistors like heterojunction bipolar transistors (HBTs) and high-electron-mobility transistors (HEMTs), where the band offset at the interface creates a two-dimensional electron gas (2DEG). In optoelectronics, heterostructures are used in light-emitting diodes (LEDs), laser diodes, and solar cells. The different band gaps of the constituent materials allow for the confinement of charge carriers and the efficient emission or absorption of light at specific wavelengths. The ability to engineer the electronic and optical properties at these interfaces makes heterostructures a cornerstone of advanced semiconductor technology.