GateDrainKapazitäten

GateDrainKapazitäten, often translated as gate-drain capacitance, refers to the parasitic capacitance that exists between the gate and drain terminals of a semiconductor device, most commonly a field-effect transistor (FET). This capacitance is an inherent property of the device's physical structure and arises from the overlapping regions of the gate and drain electrodes. In a MOSFET, for example, it is influenced by the gate oxide thickness, the overlapping area between the gate and drain, and the dielectric properties of the gate insulator. The magnitude of gate-drain capacitance is typically small, measured in picofarads (pF), but it can significantly impact the high-frequency performance of a transistor. This capacitance acts as a parasitic path for signals to couple from the output (drain) back to the input (gate), a phenomenon known as the Miller effect. The Miller effect can increase the effective capacitance seen at the gate, leading to reduced switching speeds and potentially causing oscillations in amplifier circuits. Therefore, minimizing gate-drain capacitance is a crucial design consideration for high-speed integrated circuits. Manufacturers employ various techniques, such as reducing the overlap area or employing specific layout strategies, to lower this parasitic capacitance.