GaMnAs
GaMnAs, or gallium manganese arsenide, is a dilute magnetic semiconductor formed by substituting manganese into gallium arsenide (GaAs). It is typically prepared by low-temperature molecular beam epitaxy, which stabilizes Mn on substitutional gallium sites and yields a material that combines semiconducting behavior with ferromagnetic order.
Mn in GaAs provides localized magnetic moments and acts as an acceptor, introducing holes that mediate exchange
Ferromagnetism in GaMnAs is widely interpreted as carrier-mediated. The magnetic coupling between Mn moments is thought
Electronic and transport properties are strongly influenced by compensation and disorder. GaMnAs is usually semiconducting or
GaMnAs serves as a primary model system for spintronics research and the study of carrier-mediated ferromagnetism