GaAsH3

Gallium arsenide hydride, with the chemical formula GaAsH3, is an inorganic compound that is conceptually the hydride of gallium arsenide. It is a less commonly studied compound compared to its constituent elements or the well-known semiconductor gallium arsenide (GaAs).

Information regarding the synthesis, properties, and stability of GaAsH3 is limited in scientific literature. Theoretical studies have explored its potential electronic properties and molecular structure. Due to the known instability of many metal hydrides and the high reactivity of arsine (AsH3), GaAsH3 is anticipated to be a highly reactive and potentially unstable compound. It is not commercially available and is primarily of theoretical interest or as a potential intermediate in specialized chemical processes.

The precise bonding and electronic structure of GaAsH3 are subjects of computational investigation. These studies aim to understand how the gallium and arsenic atoms interact in a hydride form. Due to the significant toxicity associated with arsine gas, any research or handling involving GaAsH3 would necessitate extreme caution and specialized laboratory conditions. Its practical applications are not established, and it remains largely a theoretical entity within inorganic chemistry.