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The FinFET, or Fin Field-Effect Transistor, is a type of transistor that has a three-dimensional gate structure. Unlike traditional planar transistors where the gate is a flat layer on top of the channel, the FinFET features a gate that wraps around a thin silicon fin. This fin acts as the channel for current flow. The gate material, often polysilicon or a metal gate, is fabricated on three sides of the fin (top and two vertical sides). This "three-dimensional" gate control significantly improves the transistor's performance.

The primary advantage of the FinFET design is its enhanced electrostatic control over the channel. The gate's ability to influence the channel is much stronger compared to planar transistors, especially as device dimensions shrink. This superior control leads to reduced leakage currents when the transistor is in the off-state, meaning less power is wasted. Consequently, FinFETs allow for higher transistor density on integrated circuits and improved power efficiency, making them crucial for modern high-performance processors and mobile devices.

FinFET technology emerged as a solution to the challenges posed by scaling down traditional planar transistors beyond a certain point. As planar transistors became smaller, it became harder for the gate to effectively control the flow of electrons in the channel, leading to increased leakage and poorer performance. The FinFET's three-dimensional structure overcomes these limitations by providing more surface area for gate control, thus enabling continued miniaturization and improved power efficiency in semiconductor manufacturing. Intel was one of the first major manufacturers to widely adopt FinFET technology in their processors.