Donorielektronien

Donorielektronien, often translated as donor electrons, refers to electrons that are available to participate in electrical conduction within a material. In the context of semiconductors, these electrons typically originate from impurity atoms that have been intentionally introduced into the crystal lattice. These impurity atoms, known as donors, possess more valence electrons than the host semiconductor atoms. For instance, in silicon, which has four valence electrons, introducing an element from Group V of the periodic table (like phosphorus or arsenic) with five valence electrons results in one extra electron per donor atom.

This extra electron is loosely bound to the donor atom and requires relatively little energy to become a free, mobile charge carrier. When these donor electrons are excited into the conduction band, they contribute to the electrical conductivity of the material. Semiconductors doped with donor impurities are classified as n-type semiconductors, where 'n' stands for negative, reflecting the charge of the primary charge carriers. The concentration of donor electrons significantly influences the conductivity of the semiconductor, allowing for precise control over its electronic properties for various technological applications, such as in transistors and diodes.