BSIM34

BSIM34 is a MOSFET device model in the BSIM family used for SPICE-based circuit simulation. It is part of the Berkeley Short-channel IGFET Model lineage, which provides compact, physics-inspired equations to describe the current-voltage and capacitance behavior of MOS transistors across a range of geometries and process conditions. The designation BSIM34 reflects its placement within the BSIM3 series, and the model has been used in various process design kits and simulation tools alongside newer generations.

The model captures essential features needed to simulate modern MOS devices, including short-channel effects, drain-induced barrier lowering, velocity saturation, mobility degradation, and temperature dependence. It models both NMOS and PMOS devices and supports parameters that describe device geometry, gate oxide thickness, dopant profiles, and threshold behavior, enabling representation of switching performance and analog characteristics.

In practice, BSIM34 has served as a bridge between earlier BSIM3 versions and later releases such as BSIM4 and beyond. It has been employed in academic research and industry for circuit design and verification, particularly in legacy process design kits. As process technology evolved toward more advanced nodes, newer BSIM generations generally supplanted BSIM34 for new designs, though the model may still appear in historical data, legacy simulations, or specific toolchains that maintain older PDKs.

See also BSIM (Berkeley Short-channel IGFET Model), BSIM3, BSIM4, and SPICE-compatible transistor models.