AugerRekombination

Auger recombination is a non-radiative recombination process in semiconductors where the energy released from an electron-hole recombination is transferred to a third particle, typically another electron or hole, exciting it to a higher energy level. This excited particle then loses its excess energy through scattering or by emitting phonons, rather than emitting a photon. The process is named after Pierre Auger, who discovered it in gases.

This phenomenon is crucial in understanding the performance of semiconductor devices. In light-emitting diodes (LEDs) and laser diodes, Auger recombination can be detrimental as it reduces the efficiency of light generation. The energy that would have been emitted as a photon is instead used to create a hot carrier, leading to power loss and potentially device heating. Conversely, in some specialized applications like thermophotovoltaic devices, Auger recombination can be exploited to convert heat into electricity.

The probability of Auger recombination depends on several factors, including the material's band structure, carrier concentrations, and temperature. It generally becomes more significant at higher injection levels or in materials with narrow band gaps and strong electron-electron interactions. Understanding and mitigating Auger recombination is an ongoing area of research in semiconductor physics and device engineering.