Atomlagavsetning

Atomlagavsetning, often translated as atomic layer deposition (ALD), is a thin-film deposition technique that enables the precise control of film thickness down to the atomic level. It is a gas-phase chemical deposition method that relies on sequential, self-limiting surface reactions. In ALD, precursors are introduced to a substrate surface in a pulsed manner, with each precursor reacting completely with the surface before the next precursor is introduced. This process ensures that the film grows layer by atomic layer, leading to highly conformal and uniform coatings.

The core principle of ALD involves two or more distinct precursor gases. Each precursor is pulsed into the reaction chamber, allowed to react with the surface, and then purged out. The self-limiting nature of these reactions means that the surface becomes saturated after each precursor pulse, preventing uncontrolled growth. This controlled growth mechanism is what allows for the precise thickness control and excellent conformality, even on complex three-dimensional structures.

ALD is widely used in various high-technology industries. Its ability to deposit ultra-thin, uniform, and conformal films makes it ideal for applications in semiconductor manufacturing, such as gate dielectrics and barrier layers. It is also employed in catalysis, optics, energy storage, and biomedical devices where precise control over material properties at the nanoscale is crucial. The versatility and scalability of ALD have made it an indispensable tool for advanced materials engineering.