ALDProzessen

ALDProzessen refers to Atomic Layer Deposition (ALD) processes. ALD is a thin-film deposition technique based on sequential, self-limiting surface reactions. It enables the deposition of highly conformal and uniform thin films with precise atomic-level thickness control. This level of control is achieved by utilizing a cyclical process involving two or more gaseous precursors. Each precursor is introduced into the reaction chamber sequentially, separated by inert gas purges.

The core principle of ALD lies in the chemisorption of precursor molecules onto the substrate surface. In the first half-cycle, one precursor reacts with the available surface sites. This reaction saturates the surface, meaning no further molecules of this precursor can react until the surface is modified. After a purge step to remove excess precursor and byproducts, the second precursor is introduced. This precursor reacts with the surface species created by the first precursor, leading to the deposition of a thin layer of the desired material. Again, a purge step follows. This cycle is repeated thousands of times to build up the desired film thickness.

ALD's advantages include its exceptional conformality, meaning it can coat complex 3D structures uniformly, and its precise thickness control, often down to a single atomic layer. These properties make ALD crucial in various advanced technological applications. It is widely used in the semiconductor industry for fabricating gate dielectrics and other critical layers in microelectronic devices. ALD also finds applications in optics, catalysis, energy storage, and biomedical fields, where precise control over material properties at the nanoscale is essential. The ability to deposit a wide range of materials, including oxides, nitrides, metals, and sulfides, further enhances its versatility.