tunnelointiresistanssi

Tunnelointiresistanssi, often translated as tunneling resistance, is a fundamental concept in quantum mechanics and solid-state physics that describes the opposition to the flow of electrons through a potential barrier by quantum tunneling. Unlike classical physics where a particle needs sufficient energy to overcome a barrier, quantum mechanics allows particles to pass through a barrier even if their energy is lower than the barrier height. This phenomenon is known as quantum tunneling.

The tunneling resistance quantifies how effectively this tunneling process is hindered. A high tunneling resistance implies that very few electrons will successfully tunnel through the barrier, while a low tunneling resistance indicates a greater probability of tunneling. Several factors influence tunneling resistance, including the width and height of the potential barrier, the mass of the tunneling particle (typically an electron), and the material properties of the barrier. Thicker and higher barriers lead to higher tunneling resistance.

Tunneling resistance is a crucial parameter in the operation of various electronic devices. For example, in scanning tunneling microscopes (STMs), the tunneling current, which is inversely related to tunneling resistance, is extremely sensitive to the distance between the microscope tip and the sample surface, allowing for atomic-scale imaging. Tunnel junctions, thin insulating layers between two conductors, also exhibit tunneling resistance, and their properties are exploited in devices like tunnel diodes and magnetic tunnel junctions (MTJs) used in magnetic random-access memory (MRAM). Understanding and controlling tunneling resistance is therefore essential for the design and performance of these advanced technologies.