phosphorusdoped

Phosphorus-doped refers to a material in which phosphorus atoms are introduced as dopants into a host lattice to modify electrical, optical, or catalytic properties. Phosphorus is a pentavalent element; when incorporated into a semiconductor or carbon-based material, it can donate electrons or create defect states that alter charge transport.

In silicon and many semiconductors, phosphorus is a donor dopant, providing extra electrons and producing n-type material. Substitutional phosphorus in silicon introduces shallow donor levels near the conduction band, enabling higher conductivity. Doping is achieved by diffusion, ion implantation, or chemical vapor deposition using phosphorus-containing precursors.

Phosphorus doping is also employed in carbon-based materials such as graphene, graphite, and carbon nanotubes. Here phosphorus can modify the electronic structure, work function, and catalytic properties. The dopant is typically introduced during synthesis or via post-synthesis treatment, and the resulting material often exhibits altered electrochemical performance and enhanced catalytic activity for reactions such as oxygen reduction or hydrogen evolution.

Applications include electronics, energy storage, sensors, and catalysis. Key considerations in synthesis are dopant concentration, uniformity, lattice damage, and dopant stability. Characterization methods include X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy to verify incorporation and bonding environments.