pTOPCon
pTOPCon, short for p-type Tunnel Oxide Passivated Contact, is a back-contact passivated solar cell architecture. It uses a thin tunnel oxide on silicon and a heavily doped p-type polycrystalline silicon layer to form a low-resistance, passivated back contact on crystalline silicon wafers.
The typical structure places a 1-2 nanometer silicon oxide layer on the rear surface of a silicon
Fabrication involves oxide growth, deposition and activation of the p+-Si contact, and rear contact metallization; post-deposition
Performance advantages include reduced recombination at the rear, potential increases in open-circuit voltage and overall efficiency,
P-type TOPCon is one of several TOPCon variants, alongside n-TOPCon, differing primarily in the dopant type