nanotransistorer

Nanotransistor is a transistor with dimensions on the nanometer scale, typically below 100 nanometers in gate length, enabling higher device density and lower operating voltages. The term covers a range of devices designed to scale beyond traditional planar transistors and to improve performance, power efficiency, and integration.

Common nanotransistor concepts include FinFETs, nanowire transistors, and transistors based on two-dimensional materials. FinFETs use a thin silicon fin that rises above the substrate to form a gate-all-around structure, providing better control of the channel and reduced short-channel effects. Nanowire transistors employ a nanoscale wire as the conduction channel, often with surrounding gates and advanced dielectrics. Transistors made from two-dimensional materials, such as graphene, molybdenum disulfide (MoS2), and related compounds, offer atomically thin channels that may enable new switching properties.

Materials used in nanotransistors range from silicon to III-V semiconductors and carbon-based channels. While silicon-based nanotransistors constitute the current manufacturing backbone, research also explores alternatives to reduce leakage and power consumption at very small sizes.

Key challenges include device variability at the nanoscale, quantum tunneling leakage, heat dissipation, and manufacturing complexity and cost. Ongoing work aims to develop new architectures, such as gate-all-around configurations, tunnel FETs, and heterostructure channels, to extend performance, energy efficiency, and reliability.

Applications span high-performance computing, mobile electronics, and sensor technologies. Realizing widespread adoption depends on scalable fabrication, robustness, and integration with existing manufacturing ecosystems, but nanotransistors remain central to sustaining performance growth in modern electronics.