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Magnetoresistive Spin Transfer (MRST) is a phenomenon that occurs in magnetic tunnel junctions (MTJs), which are nanoscale structures consisting of two ferromagnetic layers separated by a thin insulating barrier. In MRST, the resistance of the MTJ can be controlled by applying a spin-polarized current, which transfers angular momentum to the magnetization of the free layer, causing it to precess. This precession can be detected as a change in resistance, allowing for the readout of the magnetic state.

MRST has several advantages over other spintronic phenomena, such as giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR). It allows for the detection of magnetic states with high sensitivity and low power consumption, making it suitable for applications in magnetic random-access memory (MRAM) and spintronic logic devices. Additionally, MRST can be used to manipulate the magnetization of the free layer, enabling the writing of magnetic states with high speed and low energy consumption.

The dynamics of MRST are governed by the Landau-Lifshitz-Gilbert (LLG) equation, which describes the precession and damping of the magnetization in the presence of an external magnetic field and spin-polarized current. The resistance of the MTJ is determined by the relative orientation of the magnetizations of the two ferromagnetic layers, with a low resistance state corresponding to parallel magnetizations and a high resistance state corresponding to antiparallel magnetizations.

MRST has been the subject of extensive research in recent years, with efforts focused on improving the performance of MTJs and developing new applications for spintronic devices. The ability to control and detect magnetic states with high sensitivity and low power consumption makes MRST a promising technology for the development of next-generation memory and logic devices.