indiumfosfid

Indium phosphide, sometimes referred to as indiumfosfid in some languages, is a binary III–V semiconductor composed of indium and phosphorus (InP). It crystallizes in the zincblende structure and is valued for its direct bandgap and high electron mobility. At room temperature the bandgap is about 1.34 eV, placing its emission in the infrared range of roughly 1.0 to 1.6 micrometres. The lattice constant is approximately 5.87 Å, which supports integration with related InP-based alloys used in telecom devices.

Production and substrates: InP is grown primarily by metal-organic chemical vapor deposition (MOCVD) or hydride vapor phase epitaxy (HVPE), with liquid-phase epitaxy used in some cases. Devices are built on InP substrates with buffer layers to accommodate lattice matching. Doping with silicon or tin yields n-type, while zinc yields p-type; common heterostructures include InP/InGaAsP for telecom applications, enabling devices with tailored bandgaps.

Applications: InP is a foundational material for infrared optoelectronics and high-speed electronics. It forms the basis of laser diodes and photodetectors used in optical fiber communications, particularly around 1.3 and 1.55 micrometres. InP-based materials also support integrated photonics and high-electron-mobility transistors; alloying with InGaAs or InAlAs expands its usefulness for customized device performance.

Safety and handling: InP and its processing precursors should be handled according to standard semiconductor safety practices. Dust can irritate the eyes and respiratory tract, and phosphorus-containing processing chemicals require appropriate ventilation and protective equipment. Waste disposal follows local hazardous-material guidelines.