galliumnitriidiin

Gallium nitride, often abbreviated as GaN, is a binary III-V semiconductor compound of gallium and nitrogen. It is a hard, chemically inert, and mechanically stable material. GaN crystallizes in the wurtzite structure at ambient conditions. Its wide direct bandgap of 3.4 eV makes it particularly suitable for high-power, high-frequency, and high-temperature electronics. It also exhibits piezoelectric and pyroelectric properties. Gallium nitride is a crucial material in the development of optoelectronic devices, including light-emitting diodes (LEDs) and laser diodes, responsible for the blue and ultraviolet light emission. Its ability to withstand high voltages and temperatures, combined with its high electron mobility, has led to its application in power electronics, such as transistors and rectifiers, enabling more efficient energy conversion. Challenges in its production include obtaining large, defect-free single crystals, which are often grown epitaxially on substrates like sapphire or silicon carbide. Despite these challenges, GaN continues to be a key material driving innovation in lighting, displays, power supplies, and high-speed communication technologies.