galliumnitridin
Gallium nitride, often abbreviated as GaN, is a binary III-V semiconductor compound. It is formed from the elements gallium and nitrogen. Gallium nitride is known for its wide band gap, which makes it suitable for high-power and high-frequency applications. It crystallizes in the wurtzite structure under normal conditions. GaN is a very hard, chemically stable material.
The electronic properties of gallium nitride are a significant area of interest. Its wide band gap allows
Gallium nitride is extensively used in the fabrication of light-emitting diodes (LEDs). It is a key material
In the field of high-frequency electronics, GaN transistors offer superior performance. Their ability to handle high