boronarsenide

Boron arsenide, with the chemical formula BAs, is a binary III-V semiconductor composed of boron and arsenic. It crystallizes in the zinc blende (cubic) structure and has a lattice constant of about 4.77 angstroms in common high-quality samples. The material is notable for its exceptional ability to conduct heat among semiconductors, a property that has drawn significant interest for thermal management applications in electronics.

The room-temperature thermal conductivity of high-purity single-crystal boron arsenide is reported to be in the vicinity of 1000–1300 W/m·K, among the highest values observed for bulk materials and competitive with diamond. This remarkable performance arises from strong covalent bonds and light constituent atoms, and it is highly sensitive to crystal quality, impurities, and isotopic composition. Studies indicate that isotopic purification can lead to further improvements in phonon transport. In contrast, the electronic transport and precise band structure are less dominant in determining heat flow.

Electronic properties place BAs as a semiconductor with a bandgap in the near-infrared to visible range, though exact values vary by measurement and sample quality. Doping and stable, controllable incorporation of dopants remain active areas of research, with challenges linked to growth conditions and defect control. As a result, device demonstrations are still in early stages, but progress continues toward integrating BAs into electronic and optoelectronic platforms where its thermal properties offer clear advantages.

Applications under exploration focus on heat spreading layers for high-power electronics, substrates or buffers for other III-V devices, and potential infrared or visible light optoelectronics. Ongoing work aims to better understand phonon transport, refine crystal growth, and enable reproducible, doped, device-ready material.