Tunnelstrom

Tunnelstrom refers to a phenomenon observed in certain types of electrical components, particularly semiconductors, where a current flows through a material not due to the normal flow of charge carriers over a potential barrier, but rather through a quantum mechanical process known as quantum tunneling. This occurs when charge carriers, such as electrons, can pass through a thin insulating or potential barrier even though they do not possess sufficient energy to overcome it classically.

The probability of tunneling depends critically on the thickness and height of the barrier. Thinner and lower barriers allow for a higher probability of tunneling. In a semiconductor context, this can happen across a p-n junction under certain biasing conditions or within very thin insulating layers in devices like tunnel diodes or flash memory.

Tunnelstrom is distinct from thermionic emission or diffusion currents, which are based on classical thermal excitation of charge carriers. The ability of electrons to "tunnel" through a barrier is a purely quantum mechanical effect, illustrating the wave-like nature of particles. This phenomenon is exploited in various electronic devices to achieve specific functionalities, such as high-speed switching or the storage of information. Understanding and controlling tunnelstrom is crucial for the design and operation of advanced microelectronic components.