GunnDioden
GunnDioden, also known as Gunn diodes or Gunn effect diodes, are semiconductor devices that exhibit negative differential resistance (NDR) due to the Gunn effect. This effect occurs in certain types of semiconductors, typically gallium arsenide (GaAs) or indium phosphide (InP), where the electron velocity decreases as the electric field increases beyond a certain threshold. This results in a region of the current-voltage (I-V) characteristic where the current decreases as the voltage increases, leading to the NDR.
Gunn diodes are commonly used in high-frequency oscillators and amplifiers due to their ability to generate
The basic structure of a Gunn diode consists of a thin layer of n-type semiconductor material sandwiched
Despite their usefulness in high-frequency applications, Gunn diodes have some limitations. They are typically less efficient
In summary, Gunn diodes are semiconductor devices that utilize the Gunn effect to exhibit negative differential