GeAlS

GeAlS, or Gallium Aluminum Selenide, is a ternary compound semiconductor composed of gallium (Ga), aluminum (Al), and selenium (Se). It belongs to the broader class of III-VI semiconductors, which combine elements from group III (gallium and aluminum) and group VI (selenium) of the periodic table. The material is notable for its tunable bandgap properties, making it useful in optoelectronic applications.

The crystal structure of GeAlS typically follows the zincblende or wurtzite lattice, depending on synthesis conditions. By adjusting the relative proportions of gallium and aluminum, researchers can modify the bandgap energy, enabling applications in infrared detectors, solar cells, and light-emitting diodes (LEDs). Its direct bandgap nature in certain compositions also makes it suitable for laser diodes and photodetectors.

GeAlS is synthesized through techniques such as molecular beam epitaxy (MBE) or metalorganic vapor phase epitaxy (MOVPE), where precise control over doping and layer thickness is critical. The material exhibits promising thermal and electrical properties, though challenges remain in large-scale production and defect minimization. Research into GeAlS continues to explore its potential in high-efficiency photovoltaics and quantum optoelectronic devices.

Compared to traditional semiconductors like silicon or gallium arsenide, GeAlS offers advantages in specific wavelength ranges, particularly in the mid-infrared spectrum. However, its commercial adoption remains limited due to cost and processing complexities. Ongoing studies aim to improve its stability, efficiency, and scalability for next-generation electronic and photonic technologies.