FeldEffektTransistorMessungen

FeldEffektTransistor, commonly abbreviated as FET, is a type of transistor that uses an electric field to control the flow of current. It is a three-terminal device, consisting of a source, a drain, and a gate. The gate terminal is insulated from the channel (the region between the source and drain) by a thin layer of oxide, allowing the gate voltage to control the channel's conductivity without drawing significant current.

FETs are classified into two main types: Junction FETs (JFETs) and Metal-Oxide-Semiconductor FETs (MOSFETs). JFETs use a p-n junction to control the channel, while MOSFETs use a metal-oxide-semiconductor structure. MOSFETs are further divided into n-channel MOSFETs (nMOS) and p-channel MOSFETs (pMOS), depending on the type of majority carriers in the channel.

FETs are widely used in electronic circuits due to their high input impedance, low power consumption, and fast switching speeds. They are essential components in integrated circuits, analog circuits, and power electronics. The FET's ability to amplify signals and switch currents makes it a versatile device in modern electronics.