DopantVerteilung

DopantVerteilung refers to the spatial distribution of dopant atoms within a semiconductor material. This distribution is critical for determining the electrical properties of the semiconductor, such as its conductivity and the formation of p-n junctions. The concentration and location of dopant atoms directly influence the number of charge carriers (electrons or holes) available for conduction.

There are several methods to achieve a desired DopantVerteilung. Diffusion is a common technique where dopant atoms are introduced into a substrate at high temperatures, allowing them to move into the material. Ion implantation is another widely used process where dopant ions are accelerated and embedded into the semiconductor lattice. The depth and concentration profile of the dopants can be controlled by adjusting the ion energy and dose.

Beyond these primary methods, post-processing steps like annealing play a crucial role in refining the DopantVerteilung. Annealing can activate dopants, meaning they move to substitutional lattice sites where they can contribute charge carriers, and it can also reduce lattice damage caused during implantation. Techniques such as secondary ion mass spectrometry (SIMS) and spreading resistance profiling (SRP) are used to accurately measure and characterize the resulting DopantVerteilung. Understanding and controlling DopantVerteilung is fundamental to fabricating semiconductor devices with specific performance characteristics.