Si300mm111nepi

Si300mm111nepi is a designation that appears in a subset of semiconductor equipment and materials literature. It is not a publicly standardized specification. In sources where it is used, the string is taken to encode a silicon wafer built to a 300 mm diameter, with a (111) crystal orientation, and some form of epitaxial processing implied by the epi/nepi fragment. Exact meaning varies by issuer.

The prefix "Si" almost universally denotes silicon. "300mm" indicates wafer diameter; "111" refers to the crystallographic orientation of the wafer surface, which can influence epitaxial growth, surface properties, and device performance. The suffix "epi" is commonly shorthand for epitaxy; "nepi" is less standardized and may be a vendor-specific variant, a process option, or an internal code.

Usage and significance: Such wafers are relevant in research and production settings where large-diameter silicon wafers and well-controlled epitaxial layers are needed, for example in certain CMOS, photonics, or power device research. The combination of 300 mm size and (111) orientation is notable because it may affect deposition rates, defect densities, or dopant diffusion in epitaxial layers, depending on the deposition method.

Limitations: Because Si300mm111nepi is not part of an open public standard, exact specifications—tolerances, material grade, doping, and process capabilities—must be obtained directly from the supplier or project documentation. In practice, users should verify compatibility with their equipment and process flow before adopting any such designation.